Publication detail

Study of ALD Grown Multilayers Exhibiting Vacancy Induced Conductivity for Electron Emitters

BURDA, D. ALLAHAM, M. KNÁPEK, A. MOUSA, M.

Original Title

Study of ALD Grown Multilayers Exhibiting Vacancy Induced Conductivity for Electron Emitters

Type

conference paper

Language

English

Original Abstract

Thin oxide multilayers are prepared using low-temperature atomic layer deposition (ALD). The tungsten samples are coated with a multilayer stacks of refractory oxides: Al2O3, TiO2, VO2, and HfO2. The properties of the multilayer oxide are controlled by the number of ALD growth cycles, which affects the thickness of the individual layers. The grown layers of dielectrics are usually amorphous. The contaminants present in the ALD chamber also affect the properties of the final multilayer. Tuning the multilayer stack thickness and composition may result in non-conventional effects on field emission from the sharp needle underneath the dielectric layer. Such effects may be oxygen-vacancy-induced conductivity, effects due to polarization of the dielectric or plamonic carrier generation in the case of photon-assisted field emission.

Keywords

cold field emission; atomic layer deposition; ALD; FEM; electron device

Authors

BURDA, D.; ALLAHAM, M.; KNÁPEK, A.; MOUSA, M.

Released

1. 12. 2024

Publisher

IEEE

Location

NEW YORK

ISBN

979-8-3503-7977-8

Book

International Vacuum Nanoelectronics Conference

ISBN

2164-2370

Periodical

International Vacuum Nanoelectronics Conference

State

United States of America

Pages from

1

Pages to

2

Pages count

2

URL

https://ieeexplore.ieee.org/document/10652514

BibTex

@inproceedings{BUT197293,
  author="Daniel {Burda} and Alexandr {Knápek} and Mohammad Mahmoud Mohammad {Allaham} and Marwan S. Mousa {Mousa}",
  title="Study of ALD Grown Multilayers Exhibiting Vacancy Induced Conductivity for Electron Emitters",
  booktitle="International Vacuum Nanoelectronics Conference",
  year="2024",
  journal="International Vacuum Nanoelectronics Conference",
  pages="1--2",
  publisher="IEEE",
  address="NEW YORK",
  doi="10.1109/IVNC63480.2024.10652514",
  isbn="979-8-3503-7977-8",
  issn="2164-2370",
  url="https://ieeexplore.ieee.org/document/10652514"
}