Publication detail
Optical Properties of a-SiC:H Films Controlled by RF Power
BRÁNECKÝ, M. SCHMIEDOVÁ, V. ČECH, V.
Original Title
Optical Properties of a-SiC:H Films Controlled by RF Power
Type
article in a collection out of WoS and Scopus
Language
English
Original Abstract
Plasma-enhanced chemical vapor deposition operated in two modes (continuous wave (10-70 W) and pulsed plasma (2-150 W)) was employed to prepare hydrogenated amorphous carbon-silicon (a-SiC:H) films from tetravinylsilane monomer. Optical properties of a-SiC:H films were analyzed by in situ phase modulated spectroscopic ellipsometer (UVISEL, Jobin-Yvon). The dispersion dependence of the dielectric function was fitted by the Tauc-Lorentz formula to determine the RF-power-dependent refractive index, extinction coefficient, and band gap.
Keywords
PECVD, a-SiC:H, spectroscopic ellipsometry, tetravinylsilane
Authors
BRÁNECKÝ, M.; SCHMIEDOVÁ, V.; ČECH, V.
Released
16. 12. 2017
Publisher
MATFYZPRESS
Location
Prague
ISBN
978-80-7378-356-3
Book
WDS 2017 - Proceeding of Contributed Papers - Physics
Edition number
1
Pages from
137
Pages to
142
Pages count
144
URL
BibTex
@inproceedings{BUT144160,
author="Martin {Bránecký} and Veronika {Schmiedová} and Vladimír {Čech}",
title="Optical Properties of a-SiC:H Films Controlled by RF Power",
booktitle="WDS 2017 - Proceeding of Contributed Papers - Physics",
year="2017",
number="1",
pages="137--142",
publisher="MATFYZPRESS",
address="Prague",
isbn="978-80-7378-356-3",
url="https://www.mff.cuni.cz/veda/konference/wds/proc/proc-contents.php?year=2017"
}