Detail publikačního výsledku
Nonthermal tetravinylsilane plasma used for thin-film deposition: Plasma chemistry controls thin-film chemistry
ČECH, V.; BRÁNECKÝ, M.
Original Title
Nonthermal tetravinylsilane plasma used for thin-film deposition: Plasma chemistry controls thin-film chemistry
English Title
Nonthermal tetravinylsilane plasma used for thin-film deposition: Plasma chemistry controls thin-film chemistry
Type
WoS Article
Original Abstract
The power dependence of the plasma species in nonthermal tetravinylsilane plasmas used for thin-film deposition is investigated by mass spectrometry. Mass spectra analysis reveals the dominant carbon and silicon-containing species responsible for film growth. The deposition rate determined by in situ spectroscopic ellipsometry correlates with the flux of these species chemisorbed on the film surface if distinct sticking coefficients are taken into account. Then, the carbon to silicon ratio in the deposited film strongly correlates with the C/Si flux ratio for the various power-controlled plasmas. Similarly, the concentration of vinyl groups incorporated into the deposited film and the proportion of sp2 hybridization of the carbon network correlate with the fluxes of the respective plasma species.
English abstract
The power dependence of the plasma species in nonthermal tetravinylsilane plasmas used for thin-film deposition is investigated by mass spectrometry. Mass spectra analysis reveals the dominant carbon and silicon-containing species responsible for film growth. The deposition rate determined by in situ spectroscopic ellipsometry correlates with the flux of these species chemisorbed on the film surface if distinct sticking coefficients are taken into account. Then, the carbon to silicon ratio in the deposited film strongly correlates with the C/Si flux ratio for the various power-controlled plasmas. Similarly, the concentration of vinyl groups incorporated into the deposited film and the proportion of sp2 hybridization of the carbon network correlate with the fluxes of the respective plasma species.
Keywords
mass spectrometry; non-thermal plasma; organosilicon precursors; plasma-enhanced chemical vapor deposition (PECVD); thin films
Key words in English
mass spectrometry; non-thermal plasma; organosilicon precursors; plasma-enhanced chemical vapor deposition (PECVD); thin films
Authors
ČECH, V.; BRÁNECKÝ, M.
RIV year
2022
Released
28.12.2021
Publisher
Wiley
ISBN
1612-8869
Periodical
Plasma Processes and Polymers
Number
e2100192
State
Federal Republic of Germany
Pages from
1
Pages to
13
Pages count
13
URL
Full text in the Digital Library
BibTex
@article{BUT175877,
author="Vladimír {Čech} and Martin {Bránecký}",
title="Nonthermal tetravinylsilane plasma used for thin-film deposition: Plasma chemistry controls thin-film chemistry",
journal="Plasma Processes and Polymers",
year="2021",
number="e2100192",
pages="1--13",
doi="10.1002/ppap.202100192",
issn="1612-8850",
url="https://onlinelibrary.wiley.com/doi/10.1002/ppap.202100192"
}