Publication detail
Reliability of WBG Transistors
HORKÝ, J.
Original Title
Reliability of WBG Transistors
Type
article in a collection out of WoS and Scopus
Language
English
Original Abstract
Silicon Carbide (SiC) and Gallium Nitride (GaN) transistors have the potential to revolutionize power electronics industry. They have better resistance, size, and efficiency than current Silicon (Si) transistors. On the other hand, as Silicon FET has been used for several decades, its reliability and robustness has been well known and documented. The aim of this paper is to present a review of reliability and radiation issues of GaN and SiC transistors in order to mitigate potential issues in future designs.
Keywords
Bandgap, Si, GaN, SiC, Transistor, HEMT, Radiation, Reliability, Robustness.
Authors
HORKÝ, J.
Released
23. 4. 2024
Publisher
Vysoké učení technické v Brně, Fakulta elektrotechniky a informačních technologií
Location
Brno
ISBN
978-80-214-6231-1
Book
Proceedings of the 30th Conference STUDENT EEICT 2024
Edition number
První
Pages from
262
Pages to
266
Pages count
5
URL
BibTex
@inproceedings{BUT188850,
author="Jan {Horký}",
title="Reliability of WBG Transistors",
booktitle="Proceedings of the 30th Conference STUDENT EEICT 2024",
year="2024",
number="První",
pages="262--266",
publisher="Vysoké učení technické v Brně, Fakulta elektrotechniky a informačních technologií",
address="Brno",
isbn="978-80-214-6231-1",
url="https://www.eeict.cz/eeict_download/archiv/sborniky/EEICT_2024_sbornik_1.pdf"
}