Detail publikace

Reliability of WBG Transistors

HORKÝ, J.

Originální název

Reliability of WBG Transistors

Typ

článek ve sborníku mimo WoS a Scopus

Jazyk

angličtina

Originální abstrakt

Silicon Carbide (SiC) and Gallium Nitride (GaN) transistors have the potential to revolutionize power electronics industry. They have better resistance, size, and efficiency than current Silicon (Si) transistors. On the other hand, as Silicon FET has been used for several decades, its reliability and robustness has been well known and documented. The aim of this paper is to present a review of reliability and radiation issues of GaN and SiC transistors in order to mitigate potential issues in future designs.

Klíčová slova

Bandgap, Si, GaN, SiC, Transistor, HEMT, Radiation, Reliability, Robustness.

Autoři

HORKÝ, J.

Vydáno

23. 4. 2024

Nakladatel

Vysoké učení technické v Brně, Fakulta elektrotechniky a informačních technologií

Místo

Brno

ISBN

978-80-214-6231-1

Kniha

Proceedings of the 30th Conference STUDENT EEICT 2024

Číslo edice

První

Strany od

262

Strany do

266

Strany počet

5

URL

https://www.eeict.cz/eeict_download/archiv/sborniky/EEICT_2024_sbornik_1.pdf

BibTex

@inproceedings{BUT188850,
  author="Jan {Horký}",
  title="Reliability of WBG Transistors",
  booktitle="Proceedings of the 30th Conference STUDENT EEICT 2024",
  year="2024",
  number="První",
  pages="262--266",
  publisher="Vysoké učení technické v Brně, Fakulta elektrotechniky a informačních technologií",
  address="Brno",
  isbn="978-80-214-6231-1",
  url="https://www.eeict.cz/eeict_download/archiv/sborniky/EEICT_2024_sbornik_1.pdf"
}