Publication detail

Nature of electrically detected magnetic resonance in highly nitrogen-doped 6H-SiC single crystals

HOLIATKIN, M. SOLODOVNYK, A. LAGUTA, O. NEUGEBAUER, P. KALABUKHOVA, E. SAVCHENKO, D.

Original Title

Nature of electrically detected magnetic resonance in highly nitrogen-doped 6H-SiC single crystals

Type

journal article in Web of Science

Language

English

Original Abstract

This work focuses on unraveling electron paramagnetic resonance (EPR) and electrically detected magnetic resonance (EDMR) properties of n-type 6H silicon carbide (SiC) single crystals with high concentrations of uncompensated nitrogen (N) donors, which is essential for fundamental understanding of spin-related phenomena, developing spin-based devices, optimizing materials and devices, and advancing research in quantum information and spintronics. Utilizing low-temperature multifrequency EPR spectroscopy (9.4-395.12 GHz), we identified two intense signals labeled as S line and S1 line in the 6H-SiC crystals with N D - N A approximate to 8 x 1018 and 4 x 1019 cm-3. In addition, in 6H-SiC crystals with N D - N A approximate to 8 x 1018 cm-3, a low-intensity triplet from N donors substituting the quasicubic "k2" nonequivalent position (Nk2) was observed. The S line [g perpendicular to = 2.0029(2), g|| = 2.0038(2)] was assigned to the exchange interaction of conduction electrons and Nk2, while the S1 line [g perpendicular to = 2.0030(2), g|| = 2.0040(2)] is caused by the exchange spin coupling of localized N donors at the "k1" and "k2" positions. The S1 line was observed in high-frequency EDMR spectra of 6H-SiC with N D - N A approximate to 8 x 1018 cm-3, and its emergence was explained by an enhancement of the hopping conductivity due to the EPR-induced temperature increase mechanism. No EDMR spectra were found to occur in the 6H-SiC crystals with N D - N A approximate to 4 x 1019 cm-3, which is close to the critical donor concentration value for a semiconductor-metal transition. Thus it can be concluded that this N donor concentration is too high for the appearance of spin-dependent scattering and too low for the emergence of EPR-induced hopping mechanisms in 6H-SiC.

Keywords

ELECTRON; TRANSPORT; SILICON; DONORS

Authors

HOLIATKIN, M.; SOLODOVNYK, A.; LAGUTA, O.; NEUGEBAUER, P.; KALABUKHOVA, E.; SAVCHENKO, D.

Released

9. 9. 2024

Publisher

American Physical Society

Location

COLLEGE PK

ISBN

2469-9969

Periodical

PHYSICAL REVIEW B

Year of study

110

Number

12

State

United States of America

Pages from

1

Pages to

8

Pages count

8

URL

https://journals.aps.org/prb/abstract/10.1103/PhysRevB.110.125205

Full text in the Digital Library

http://hdl.handle.net/11012/252350

BibTex

@article{BUT197255,
  author="Maryna {Holiatkin} and Artur {Solodovnyk} and Oleksii {Laguta} and Petr {Neugebauer} and Ekatarina {Kalabukhova} and Dariya {Savchenko}",
  title="Nature of electrically detected magnetic resonance in highly nitrogen-doped 6H-SiC single crystals",
  journal="PHYSICAL REVIEW B",
  year="2024",
  volume="110",
  number="12",
  pages="8",
  doi="10.1103/PhysRevB.110.125205",
  issn="2469-9969",
  url="https://journals.aps.org/prb/abstract/10.1103/PhysRevB.110.125205"
}