Detail publikace

Nature of electrically detected magnetic resonance in highly nitrogen-doped 6H-SiC single crystals

HOLIATKIN, M. SOLODOVNYK, A. LAGUTA, O. NEUGEBAUER, P. KALABUKHOVA, E. SAVCHENKO, D.

Originální název

Typ

článek v časopise ve Web of Science, Jimp

Jazyk

angličtina

Originální abstrakt

This work focuses on unraveling electron paramagnetic resonance (EPR) and electrically detected magnetic resonance (EDMR) properties of n-type 6H silicon carbide (SiC) single crystals with high concentrations of uncompensated nitrogen (N) donors, which is essential for fundamental understanding of spin-related phenomena, developing spin-based devices, optimizing materials and devices, and advancing research in quantum information and spintronics. Utilizing low-temperature multifrequency EPR spectroscopy (9.4-395.12 GHz), we identified two intense signals labeled as S line and S1 line in the 6H-SiC crystals with N D - N A approximate to 8 x 1018 and 4 x 1019 cm-3. In addition, in 6H-SiC crystals with N D - N A approximate to 8 x 1018 cm-3, a low-intensity triplet from N donors substituting the quasicubic "k2" nonequivalent position (Nk2) was observed. The S line [g perpendicular to = 2.0029(2), g|| = 2.0038(2)] was assigned to the exchange interaction of conduction electrons and Nk2, while the S1 line [g perpendicular to = 2.0030(2), g|| = 2.0040(2)] is caused by the exchange spin coupling of localized N donors at the "k1" and "k2" positions. The S1 line was observed in high-frequency EDMR spectra of 6H-SiC with N D - N A approximate to 8 x 1018 cm-3, and its emergence was explained by an enhancement of the hopping conductivity due to the EPR-induced temperature increase mechanism. No EDMR spectra were found to occur in the 6H-SiC crystals with N D - N A approximate to 4 x 1019 cm-3, which is close to the critical donor concentration value for a semiconductor-metal transition. Thus it can be concluded that this N donor concentration is too high for the appearance of spin-dependent scattering and too low for the emergence of EPR-induced hopping mechanisms in 6H-SiC.

Klíčová slova

ELECTRON; TRANSPORT; SILICON; DONORS

Autoři

HOLIATKIN, M.; SOLODOVNYK, A.; LAGUTA, O.; NEUGEBAUER, P.; KALABUKHOVA, E.; SAVCHENKO, D.

Vydáno

9. 9. 2024

Nakladatel

American Physical Society

Místo

COLLEGE PK

ISSN

2469-9969

Periodikum

PHYSICAL REVIEW B

Ročník

110

Číslo

Stát

Spojené státy americké

Strany od

Strany do

Strany počet

URL

https://journals.aps.org/prb/abstract/10.1103/PhysRevB.110.125205

Plný text v Digitální knihovně

http://hdl.handle.net/11012/252350

BibTex

@article{BUT197255,
  author="Maryna {Holiatkin} and Artur {Solodovnyk} and Oleksii {Laguta} and Petr {Neugebauer} and Ekatarina {Kalabukhova} and Dariya {Savchenko}",
  title="Nature of electrically detected magnetic resonance in highly nitrogen-doped 6H-SiC single crystals",
  journal="PHYSICAL REVIEW B",
  year="2024",
  volume="110",
  number="12",
  pages="8",
  doi="10.1103/PhysRevB.110.125205",
  issn="2469-9969",
  url="https://journals.aps.org/prb/abstract/10.1103/PhysRevB.110.125205"
}