Publication detail

Thermal desorption spectroscopy of hydrogen from a-Si:H

SALYK, O., PORUBA, A., SCHAUER, F.

Original Title

Type

journal article - other

Language

English

Original Abstract

Thermal desorption spectroscopy (TDS) based on the mass spectroscopy of thermally evolved hydrogen is used for desorption analysis of amorphous hydrogenated silicon (a-Si:H). Two series of glow discharge chemical vapour deposited a-Si:H were investigated by the TDS method. Constant temperature growth rate enabled to determine temperature regions of hydrogen evolution and its total content in the film. These values are compared with the results of infrared (IR) absorption spectroscopy. The dependence of the H content and the position of the maximum of the evolution curve on deposition conditions, as radio frequency (RF) power used in a standard plasma enhanced chemical vapour deposition (PE CVD) glow discharge, was observed. The RF power was related to a silane flow rate during the deposition. The lower temperature of the evolution peaks and simultaneously the lower H content were observed in the layers prepared under the larger relative RF power conditions (the high silane decomposition efficiency). These results correlate well with light degradation measurements in device quality samples.

Keywords

amorphoud silicon, hydrogen, desorption

Authors

SALYK, O., PORUBA, A., SCHAUER, F.

RIV year

1996

Released

1. 1. 1996

ISBN

0366-6352

Periodical

Chemical Papers

Year of study

Number

State

Slovak Republic

Pages from

177

Pages to

182

Pages count

BibTex

@article{BUT38348,
  author="Ota {Salyk} and Aleš {Poruba} and František {Schauer}",
  title="Thermal desorption spectroscopy of hydrogen from a-Si:H",
  journal="Chemical Papers",
  year="1996",
  volume="50",
  number="4",
  pages="6",
  issn="0366-6352"
}