Publication result detail
Amorphous Hydrogenated Silicon Prepared by Ion Beam Assisted Raective Evaporation-Preparation and Basic Properties
SALYK, O., SCHAUER, F., ZMEŠKAL, O., ZUBÍK, K., POLCER, J.
Original Title
Amorphous Hydrogenated Silicon Prepared by Ion Beam Assisted Raective Evaporation-Preparation and Basic Properties
English Title
Amorphous Hydrogenated Silicon Prepared by Ion Beam Assisted Raective Evaporation-Preparation and Basic Properties
Type
Peer-reviewed article not indexed in WoS or Scopus
Original Abstract
The deposition of a-Si:H by electron beam evaporation and ion beam hydrogenation is described. The films are characterized by density, hydrogen content and refractive index and by SIMS and AES analysis. The transport properties were determined by conductivity and photoconductivity measurements and using the temperature modulated space charge limited currents method (TM-SCLC)
English abstract
The deposition of a-Si:H by electron beam evaporation and ion beam hydrogenation is described. The films are characterized by density, hydrogen content and refractive index and by SIMS and AES analysis. The transport properties were determined by conductivity and photoconductivity measurements and using the temperature modulated space charge limited currents method (TM-SCLC)
Key words in English
amorphous silicon,evaporation, ion beam
Authors
SALYK, O., SCHAUER, F., ZMEŠKAL, O., ZUBÍK, K., POLCER, J.
Released
01.01.1987
Book
J.Non-Crystall. Solids 97/98
Volume
97&98
Pages from
1435
BibTex
@article{BUT39723,
author="Ota {Salyk} and František {Schauer} and Oldřich {Zmeškal} and Karel {Zubík} and Jaroslav {Polcer}",
title="Amorphous Hydrogenated Silicon Prepared by Ion Beam Assisted Raective Evaporation-Preparation and Basic Properties",
year="1987",
volume="97&98"
}