Publication result detail
Modeling of the I-V Characteristics in Amorphous Silicon n+-i-n+ Devices
ČECH, V.
Original Title
Modeling of the I-V Characteristics in Amorphous Silicon n+-i-n+ Devices
English Title
Modeling of the I-V Characteristics in Amorphous Silicon n+-i-n+ Devices
Type
Peer-reviewed article not indexed in WoS or Scopus
Original Abstract
Both model and experimental results of electron injection in amorphous silicon n+-i-n+ devices with heavily doped n+ layers are presented using a realistic model of such a structure, developed by the author.
English abstract
Both model and experimental results of electron injection in amorphous silicon n+-i-n+ devices with heavily doped n+ layers are presented using a realistic model of such a structure, developed by the author.
Key words in English
amorphous silicon, thin film, space-charge-limited currents
Authors
ČECH, V.
Released
01.01.2000
ISBN
0021-4922
Periodical
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume
88
Number
9
State
Japan
Pages from
5374
Pages count
7
BibTex
@article{BUT39847,
author="Vladimír {Čech}",
title="Modeling of the I-V Characteristics in Amorphous Silicon n+-i-n+ Devices",
journal="JAPANESE JOURNAL OF APPLIED PHYSICS",
year="2000",
volume="88",
number="9",
pages="7",
issn="0021-4922"
}