Publication result detail
Determination of Density of Localized States in a-Si:H from the Time Relaxation of SCL Conductivity
ČECH, V.
Original Title
Determination of Density of Localized States in a-Si:H from the Time Relaxation of SCL Conductivity
English Title
Determination of Density of Localized States in a-Si:H from the Time Relaxation of SCL Conductivity
Type
Peer-reviewed article not indexed in WoS or Scopus
Original Abstract
A new technique is described, which is suitable for the evaluation of the bulk density of localized states in undoped a-Si:H from the timerelaxation of the conductivity limited by the space charge prepared by a previous injection of electrons.
English abstract
A new technique is described, which is suitable for the evaluation of the bulk density of localized states in undoped a-Si:H from the timerelaxation of the conductivity limited by the space charge prepared by a previous injection of electrons.
Key words in English
amorphous silicon, thin film, space-charge-limited currents
Authors
ČECH, V.
Released
01.01.2001
ISBN
0031-8965
Periodical
physica status solidi
Volume
187
Number
2
State
Federal Republic of Germany
Pages from
487
Pages count
5
BibTex
@article{BUT39850,
author="Vladimír {Čech}",
title="Determination of Density of Localized States in a-Si:H from the Time Relaxation of SCL Conductivity",
journal="physica status solidi",
year="2001",
volume="187",
number="2",
pages="5",
issn="0031-8965"
}