Detail publikačního výsledku
Chemistry of plasma-polymerized vinyltriethoxysilane controlled by deposition conditions
ČECH, V.; ZEMEK, J.; PEŘINA, V.
Original Title
Chemistry of plasma-polymerized vinyltriethoxysilane controlled by deposition conditions
English Title
Chemistry of plasma-polymerized vinyltriethoxysilane controlled by deposition conditions
Type
Peer-reviewed article not indexed in WoS or Scopus
Original Abstract
Plasma-polymerized thin films of vinyltriethoxysilane were deposited on IR-transparent silicon wafers using plasma-enhanced chemical vapor deposition at a wide range of RF pulsed power (0.05 - 25 W). The deposited films were analyzed by spectroscopic techniques (RBS, ERDA, XPS, and FTIR) in order to compare their chemical structure and elemental composition, which were correlated with plasma products monitored by mass spectroscopy. Thin polymer films deposited at 0.05 W were SiO-rich (55 at.-%), while those prepared at 25 W were dominated by carbon 66 at.-%. The organic/inorganic character (C/Si ratio) of plasma polymer varied widely, from 2.5 to 7.3 with enhanced power. The chemical structure of the polymer network and side groups was also controlled by the effective power. Chemical analyses enabled us to gain an idea of the chemical structure of the films.
English abstract
Plasma-polymerized thin films of vinyltriethoxysilane were deposited on IR-transparent silicon wafers using plasma-enhanced chemical vapor deposition at a wide range of RF pulsed power (0.05 - 25 W). The deposited films were analyzed by spectroscopic techniques (RBS, ERDA, XPS, and FTIR) in order to compare their chemical structure and elemental composition, which were correlated with plasma products monitored by mass spectroscopy. Thin polymer films deposited at 0.05 W were SiO-rich (55 at.-%), while those prepared at 25 W were dominated by carbon 66 at.-%. The organic/inorganic character (C/Si ratio) of plasma polymer varied widely, from 2.5 to 7.3 with enhanced power. The chemical structure of the polymer network and side groups was also controlled by the effective power. Chemical analyses enabled us to gain an idea of the chemical structure of the films.
Keywords
ESCA/XPS; FT-IR; plasma-enhanced chemical vapor deposition (PE-CVD); Rutherford back-scattering (RBS); thin films
Key words in English
ESCA/XPS; FT-IR; plasma-enhanced chemical vapor deposition (PE-CVD); Rutherford back-scattering (RBS); thin films
Authors
ČECH, V.; ZEMEK, J.; PEŘINA, V.
RIV year
2010
Released
22.12.2008
ISBN
1612-8850
Periodical
Plasma Processes and Polymers
Volume
5
Number
8
State
Federal Republic of Germany
Pages from
745
Pages to
752
Pages count
8
Full text in the Digital Library
BibTex
@article{BUT48293,
author="Vladimír {Čech} and Josef {Zemek} and Vratislav {Peřina}",
title="Chemistry of plasma-polymerized vinyltriethoxysilane controlled by deposition conditions",
journal="Plasma Processes and Polymers",
year="2008",
volume="5",
number="8",
pages="745--752",
issn="1612-8850"
}