Project detail

Reconfigurable Halide Perovskite Materials for New Era of Neuromorphic Electronics

Duration: 1.1.2026 — 31.12.2028

Funding resources

Grantová agentura České republiky - Standardní projekty

On the project

This project is devoted to material research in the field of emerging neuromorphic electronics. The aim of the project is the design, development, and optimization of hybrid (organic-inorganic) semiconductor materials and devices for brain-inspired electronics, with prospective practical applications ranging from neuromorphic computing to electronic sensorimotor nerves. To apply novel materials in complex artificial neural networks, it is necessary to understand the fundamental properties and mechanisms that occur in their building blocks, in the artificial synapses.

Keywords
halide perovskites; semiconductors; memristors; memory devices; neuromoprhic electronics

Mark

26-23776S

Default language

English

People responsible

Pospíšil Jan, Ing., Ph.D. - principal person responsible
Gavranović Stevan, Ing., Ph.D. - fellow researcher
Holečková Jana, Ing. - fellow researcher
Viewegh Petr, Ing., Ph.D. - fellow researcher
Zmeškal Oldřich, prof. Ing., CSc. - fellow researcher

Units

Materials Research Centre
- responsible department (26.3.2025 - not assigned)
Materials Research Centre
- beneficiary (1.1.2026 - 31.12.2028)

Results

GAVRANOVIĆ, S.; ZMEŠKAL, O.; WEITER, M.; POSPÍŠIL, J. Advanced Space Charge Limited Currents: From Current-Voltage Characteristics to Bandgap Maps. nanoGe Conference Proceedings. Fundació Scito, 2026. p. 1 (1 s.).
Detail

POSPÍŠIL, J.; ZMEŠKAL, O.; WEITER, M.; GAVRANOVIĆ, S. Unraveling the Charge Carrier Dynamics of Perovskites Using an Advanced Space-Charge-Limited Current Model. nanoGe Conference Proceedings. Fundació Scito, 2026. 1 p.
Detail

POSPÍŠIL, J.; PETLACHOVÁ, N.; HOLEČKOVÁ, J.; GAVRANOVIĆ, S. How Material Properties and Charge Carrier Dynamics Shape the Memristive Response of Perovskites. nanoGe Conference Proceedings. Fundació Scito, 2026. p. 1 (1 s.).
Detail

GAVRANOVIĆ, S.; VALASTRO, S.; DERETZIS, I.; SMECCA, E.; ALBERTI, A.; MANNINO, G.; POSPÍŠIL, J. Structure–Property Relationship in Low-Dimensional Antimony and Bismuth Halide Perovskite Thin Films. nanoGe Conference Proceedings. Fundació Scito, 2026. p. 1 (1 s.).
Detail

JANČUŠKA, J.; PETLACHOVÁ, N.; GAVRANOVIĆ, S.; POSPÍŠIL, J. Neuromorphic Chips: Resistive State of Halide Perovskite Memristor Devices as Physical Representation Of Binary Code. 2026. 1 p.
Detail

Responsibility: Pospíšil Jan, Ing., Ph.D.