Detail projektu

Reconfigurable Halide Perovskite Materials for New Era of Neuromorphic Electronics

Období řešení: 1.1.2026 — 31.12.2028

Zdroje financování

Grantová agentura České republiky - Standardní projekty

O projektu

This project is devoted to material research in the field of emerging neuromorphic electronics. The aim of the project is the design, development, and optimization of hybrid (organic-inorganic) semiconductor materials and devices for brain-inspired electronics, with prospective practical applications ranging from neuromorphic computing to electronic sensorimotor nerves. To apply novel materials in complex artificial neural networks, it is necessary to understand the fundamental properties and mechanisms that occur in their building blocks, in the artificial synapses.

Klíčová slova
halide perovskites; semiconductors; memristors; memory devices; neuromoprhic electronics

Označení

26-23776S

Originální jazyk

angličtina

Řešitelé

Pospíšil Jan, Ing., Ph.D. - hlavní řešitel
Gavranović Stevan, Ing., Ph.D. - spoluřešitel
Holečková Jana, Ing. - spoluřešitel
Viewegh Petr, Ing., Ph.D. - spoluřešitel
Zmeškal Oldřich, prof. Ing., CSc. - spoluřešitel

Útvary

Centrum materiálového výzkumu
- odpovědné pracoviště (26.3.2025 - nezadáno)
Centrum materiálového výzkumu
- příjemce (1.1.2026 - 31.12.2028)

Výsledky

GAVRANOVIĆ, S.; ZMEŠKAL, O.; WEITER, M.; POSPÍŠIL, J. Advanced Space Charge Limited Currents: From Current-Voltage Characteristics to Bandgap Maps. nanoGe Conference Proceedings. Fundació Scito, 2026. p. 1 (1 s.).
Detail

POSPÍŠIL, J.; ZMEŠKAL, O.; WEITER, M.; GAVRANOVIĆ, S. Unraveling the Charge Carrier Dynamics of Perovskites Using an Advanced Space-Charge-Limited Current Model. nanoGe Conference Proceedings. Fundació Scito, 2026. 1 p.
Detail

POSPÍŠIL, J.; PETLACHOVÁ, N.; HOLEČKOVÁ, J.; GAVRANOVIĆ, S. How Material Properties and Charge Carrier Dynamics Shape the Memristive Response of Perovskites. nanoGe Conference Proceedings. Fundació Scito, 2026. p. 1 (1 s.).
Detail

GAVRANOVIĆ, S.; VALASTRO, S.; DERETZIS, I.; SMECCA, E.; ALBERTI, A.; MANNINO, G.; POSPÍŠIL, J. Structure–Property Relationship in Low-Dimensional Antimony and Bismuth Halide Perovskite Thin Films. nanoGe Conference Proceedings. Fundació Scito, 2026. p. 1 (1 s.).
Detail

JANČUŠKA, J.; PETLACHOVÁ, N.; GAVRANOVIĆ, S.; POSPÍŠIL, J. Neuromorphic Chips: Resistive State of Halide Perovskite Memristor Devices as Physical Representation Of Binary Code. 2026. 1 p.
Detail

Odpovědnost: Pospíšil Jan, Ing., Ph.D.