Detail publikačního výsledku
Organic field effect transistor (OFET) based on nanofibrous PVDF-MOF gate insulator
HOLEČKOVÁ, J.; PISARENKO, T.; ZMEŠKAL, O.; POSPÍŠIL, J.; PAPEŽ, N.; SOBOLA, D.
Originální název
Organic field effect transistor (OFET) based on nanofibrous PVDF-MOF gate insulator
Anglický název
Organic field effect transistor (OFET) based on nanofibrous PVDF-MOF gate insulator
Druh
Článek recenzovaný mimo WoS a Scopus
Originální abstrakt
This paper deals with the comparison of measured results of two types of organic thin film transistors, namely organic electrochemical transistor (OECT) and organic field-effect transistor (OFET), where the same ionic liquid (EMIM-TFSI) was used in both cases. All the current-voltage characteristics (input, output, transfer current and transfer voltage) were measured and discussed.
Anglický abstrakt
This paper deals with the comparison of measured results of two types of organic thin film transistors, namely organic electrochemical transistor (OECT) and organic field-effect transistor (OFET), where the same ionic liquid (EMIM-TFSI) was used in both cases. All the current-voltage characteristics (input, output, transfer current and transfer voltage) were measured and discussed.
Klíčová slova
MOF, OFET, OECT, EMIM-TFSI, current-voltage characteristics
Klíčová slova v angličtině
MOF, OFET, OECT, EMIM-TFSI, current-voltage characteristics
Autoři
HOLEČKOVÁ, J.; PISARENKO, T.; ZMEŠKAL, O.; POSPÍŠIL, J.; PAPEŽ, N.; SOBOLA, D.
Vydáno
04.09.2025
ISSN
0094-243X
Periodikum
AIP conference proceedings
Svazek
3355
Číslo
020005
Stát
Spojené státy americké
Strany od
020005-1
Strany do
020005-10
Strany počet
10
URL
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