Detail publikačního výsledku

Oxidation resistance of organosilicon layered nanostructures synthesized by nonthermal plasma and plasma silica as a source of oxidizing agent

BRÁNECKÝ, M.; JIŘÍČEK, P.; HOUDKOVÁ, J.; OLIVOVÁ, L.; ABOUALIGALEDARI, N.; PLICHTA, T.; ČECH, V.

Originální název

Oxidation resistance of organosilicon layered nanostructures synthesized by nonthermal plasma and plasma silica as a source of oxidizing agent

Anglický název

Oxidation resistance of organosilicon layered nanostructures synthesized by nonthermal plasma and plasma silica as a source of oxidizing agent

Druh

Článek WoS

Originální abstrakt

Plasma polymer (1.2 g cm-3), compact silicon carbide (2.1 g cm-3) and plasma silica (2.2 g cm-3) were synthesized from pure tetravinylsilane vapor or its mixture with argon or oxygen by plasma-enhanced chemical vapor deposition. These materials in the form of nanolayers were combined into layered nanostructures deposited on silicon wafers. XPS depth profiling was used to analyze the chemical depth profiles across the layered nanostructures. The oxidation resistance of highly cross-linked silicon carbide and plasma silica was confirmed after 18 months of storage. However, the plasma polymer with low oxidation resistance must be protected by a 5-nm thick compact silicon carbide barrier to prevent its oxidation. Plasma silica was identified as the source of oxidizing agent for the adjacent plasma polymer in the silica/polymer nanostructure protected by a barrier against the surrounding environment. Oxygen penetrated the polymer by 37 nm in two years.

Anglický abstrakt

Plasma polymer (1.2 g cm-3), compact silicon carbide (2.1 g cm-3) and plasma silica (2.2 g cm-3) were synthesized from pure tetravinylsilane vapor or its mixture with argon or oxygen by plasma-enhanced chemical vapor deposition. These materials in the form of nanolayers were combined into layered nanostructures deposited on silicon wafers. XPS depth profiling was used to analyze the chemical depth profiles across the layered nanostructures. The oxidation resistance of highly cross-linked silicon carbide and plasma silica was confirmed after 18 months of storage. However, the plasma polymer with low oxidation resistance must be protected by a 5-nm thick compact silicon carbide barrier to prevent its oxidation. Plasma silica was identified as the source of oxidizing agent for the adjacent plasma polymer in the silica/polymer nanostructure protected by a barrier against the surrounding environment. Oxygen penetrated the polymer by 37 nm in two years.

Klíčová slova

Plasma-enhanced chemical vapor deposition, (PECVD), Layered nanostructure, XPS depth profiling, Post-deposition oxidation, Interface, Barrier

Klíčová slova v angličtině

Plasma-enhanced chemical vapor deposition, (PECVD), Layered nanostructure, XPS depth profiling, Post-deposition oxidation, Interface, Barrier

Autoři

BRÁNECKÝ, M.; JIŘÍČEK, P.; HOUDKOVÁ, J.; OLIVOVÁ, L.; ABOUALIGALEDARI, N.; PLICHTA, T.; ČECH, V.

Vydáno

28.02.2026

Periodikum

APPLIED SURFACE SCIENCE

Svazek

719

Číslo

28.2.2026

Stát

Nizozemsko

Strany od

1

Strany do

9

Strany počet

9

URL

BibTex

@article{BUT200439,
  author="Martin {Bránecký} and  {} and  {} and Lucie {Olivová} and Naghmeh {Aboualigaledari} and Tomáš {Plichta} and Vladimír {Čech}",
  title="Oxidation resistance of organosilicon layered nanostructures synthesized by nonthermal plasma and plasma silica as a source of oxidizing agent",
  journal="APPLIED SURFACE SCIENCE",
  year="2026",
  volume="719",
  number="28.2.2026",
  pages="1--9",
  doi="10.1016/j.apsusc.2025.164972",
  issn="0169-4332",
  url="https://www.sciencedirect.com/science/article/pii/S0169433225026881?pes=vor&utm_source=scopus&getft_integrator=scopus"
}