Detail publikačního výsledku
Oxidation resistance of organosilicon layered nanostructures synthesized by nonthermal plasma and plasma silica as a source of oxidizing agent
BRÁNECKÝ, M.; JIŘÍČEK, P.; HOUDKOVÁ, J.; OLIVOVÁ, L.; ABOUALIGALEDARI, N.; PLICHTA, T.; ČECH, V.
Originální název
Oxidation resistance of organosilicon layered nanostructures synthesized by nonthermal plasma and plasma silica as a source of oxidizing agent
Anglický název
Oxidation resistance of organosilicon layered nanostructures synthesized by nonthermal plasma and plasma silica as a source of oxidizing agent
Druh
Článek WoS
Originální abstrakt
Plasma polymer (1.2 g cm-3), compact silicon carbide (2.1 g cm-3) and plasma silica (2.2 g cm-3) were synthesized from pure tetravinylsilane vapor or its mixture with argon or oxygen by plasma-enhanced chemical vapor deposition. These materials in the form of nanolayers were combined into layered nanostructures deposited on silicon wafers. XPS depth profiling was used to analyze the chemical depth profiles across the layered nanostructures. The oxidation resistance of highly cross-linked silicon carbide and plasma silica was confirmed after 18 months of storage. However, the plasma polymer with low oxidation resistance must be protected by a 5-nm thick compact silicon carbide barrier to prevent its oxidation. Plasma silica was identified as the source of oxidizing agent for the adjacent plasma polymer in the silica/polymer nanostructure protected by a barrier against the surrounding environment. Oxygen penetrated the polymer by 37 nm in two years.
Anglický abstrakt
Plasma polymer (1.2 g cm-3), compact silicon carbide (2.1 g cm-3) and plasma silica (2.2 g cm-3) were synthesized from pure tetravinylsilane vapor or its mixture with argon or oxygen by plasma-enhanced chemical vapor deposition. These materials in the form of nanolayers were combined into layered nanostructures deposited on silicon wafers. XPS depth profiling was used to analyze the chemical depth profiles across the layered nanostructures. The oxidation resistance of highly cross-linked silicon carbide and plasma silica was confirmed after 18 months of storage. However, the plasma polymer with low oxidation resistance must be protected by a 5-nm thick compact silicon carbide barrier to prevent its oxidation. Plasma silica was identified as the source of oxidizing agent for the adjacent plasma polymer in the silica/polymer nanostructure protected by a barrier against the surrounding environment. Oxygen penetrated the polymer by 37 nm in two years.
Klíčová slova
Plasma-enhanced chemical vapor deposition, (PECVD), Layered nanostructure, XPS depth profiling, Post-deposition oxidation, Interface, Barrier
Klíčová slova v angličtině
Plasma-enhanced chemical vapor deposition, (PECVD), Layered nanostructure, XPS depth profiling, Post-deposition oxidation, Interface, Barrier
Autoři
BRÁNECKÝ, M.; JIŘÍČEK, P.; HOUDKOVÁ, J.; OLIVOVÁ, L.; ABOUALIGALEDARI, N.; PLICHTA, T.; ČECH, V.
Vydáno
28.02.2026
Periodikum
APPLIED SURFACE SCIENCE
Svazek
719
Číslo
28.2.2026
Stát
Nizozemsko
Strany od
1
Strany do
9
Strany počet
9
URL
BibTex
@article{BUT200439,
author="Martin {Bránecký} and {} and {} and Lucie {Olivová} and Naghmeh {Aboualigaledari} and Tomáš {Plichta} and Vladimír {Čech}",
title="Oxidation resistance of organosilicon layered nanostructures synthesized by nonthermal plasma and plasma silica as a source of oxidizing agent",
journal="APPLIED SURFACE SCIENCE",
year="2026",
volume="719",
number="28.2.2026",
pages="1--9",
doi="10.1016/j.apsusc.2025.164972",
issn="0169-4332",
url="https://www.sciencedirect.com/science/article/pii/S0169433225026881?pes=vor&utm_source=scopus&getft_integrator=scopus"
}