Thermal desorption spectroscopy of hydrogen from a-Si:H

Thermal desorption spectroscopy of hydrogen from a-Si:H

Článek recenzovaný mimo WoS a Scopus

Thermal desorption spectroscopy (TDS) based on the mass spectroscopy of thermally evolved hydrogen is used for desorption analysis of amorphous hydrogenated silicon (a-Si:H). Two series of glow discharge chemical vapour deposited a-Si:H were investigated by the TDS method. Constant temperature growth rate enabled to determine temperature regions of hydrogen evolution and its total content in the film. These values are compared with the results of infrared (IR) absorption spectroscopy. The dependence of the H content and the position of the maximum of the evolution curve on deposition conditions, as radio frequency (RF) power used in a standard plasma enhanced chemical vapour deposition (PE CVD) glow discharge, was observed. The RF power was related to a silane flow rate during the deposition. The lower temperature of the evolution peaks and simultaneously the lower H content were observed in the layers prepared under the larger relative RF power conditions (the high silane decomposition efficiency). These results correlate well with light degradation measurements in device quality samples.

Thermal desorption spectroscopy (TDS) based on the mass spectroscopy of thermally evolved hydrogen is used for desorption analysis of amorphous hydrogenated silicon (a-Si:H). Two series of glow discharge chemical vapour deposited a-Si:H were investigated by the TDS method. Constant temperature growth rate enabled to determine temperature regions of hydrogen evolution and its total content in the film. These values are compared with the results of infrared (IR) absorption spectroscopy. The dependence of the H content and the position of the maximum of the evolution curve on deposition conditions, as radio frequency (RF) power used in a standard plasma enhanced chemical vapour deposition (PE CVD) glow discharge, was observed. The RF power was related to a silane flow rate during the deposition. The lower temperature of the evolution peaks and simultaneously the lower H content were observed in the layers prepared under the larger relative RF power conditions (the high silane decomposition efficiency). These results correlate well with light degradation measurements in device quality samples.

amorphoud silicon, hydrogen, desorption

amorphoud silicon, hydrogen, desorption

SALYK, O., PORUBA, A., SCHAUER, F.

01.01.1996

0366-6352

Chemical Papers

50

4

Slovenská republika

177

6