Detail publikačního výsledku

Modeling of the I-V Characteristics in Amorphous Silicon n+-i-n+ Devices

ČECH, V.

Originální název

Modeling of the I-V Characteristics in Amorphous Silicon n+-i-n+ Devices

Anglický název

Modeling of the I-V Characteristics in Amorphous Silicon n+-i-n+ Devices

Druh

Článek recenzovaný mimo WoS a Scopus

Originální abstrakt

Both model and experimental results of electron injection in amorphous silicon n+-i-n+ devices with heavily doped n+ layers are presented using a realistic model of such a structure, developed by the author.

Anglický abstrakt

Both model and experimental results of electron injection in amorphous silicon n+-i-n+ devices with heavily doped n+ layers are presented using a realistic model of such a structure, developed by the author.

Klíčová slova v angličtině

amorphous silicon, thin film, space-charge-limited currents

Autoři

ČECH, V.

Vydáno

01.01.2000

ISSN

0021-4922

Periodikum

JAPANESE JOURNAL OF APPLIED PHYSICS

Svazek

88

Číslo

9

Stát

Japonsko

Strany od

5374

Strany počet

7

Plný text v Digitální knihovně

http://hdl.handle.net/

BibTex

@article{BUT39847,
  author="Vladimír {Čech}",
  title="Modeling of the I-V Characteristics in Amorphous Silicon n+-i-n+ Devices",
  journal="JAPANESE JOURNAL OF APPLIED PHYSICS",
  year="2000",
  volume="88",
  number="9",
  pages="7",
  issn="0021-4922"
}