Detail publikačního výsledku

Determination of Density of Localized States in a-Si:H from the Time Relaxation of SCL Conductivity

ČECH, V.

Originální název

Determination of Density of Localized States in a-Si:H from the Time Relaxation of SCL Conductivity

Anglický název

Determination of Density of Localized States in a-Si:H from the Time Relaxation of SCL Conductivity

Druh

Článek recenzovaný mimo WoS a Scopus

Originální abstrakt

A new technique is described, which is suitable for the evaluation of the bulk density of localized states in undoped a-Si:H from the timerelaxation of the conductivity limited by the space charge prepared by a previous injection of electrons.

Anglický abstrakt

A new technique is described, which is suitable for the evaluation of the bulk density of localized states in undoped a-Si:H from the timerelaxation of the conductivity limited by the space charge prepared by a previous injection of electrons.

Klíčová slova v angličtině

amorphous silicon, thin film, space-charge-limited currents

Autoři

ČECH, V.

Vydáno

01.01.2001

ISSN

0031-8965

Periodikum

physica status solidi

Svazek

187

Číslo

2

Stát

Spolková republika Německo

Strany od

487

Strany počet

5

BibTex

@article{BUT39850,
  author="Vladimír {Čech}",
  title="Determination of Density of Localized States in a-Si:H from the Time Relaxation of SCL Conductivity",
  journal="physica status solidi",
  year="2001",
  volume="187",
  number="2",
  pages="5",
  issn="0031-8965"
}