Detail publikačního výsledku

Chemistry of plasma-polymerized vinyltriethoxysilane controlled by deposition conditions

ČECH, V.; ZEMEK, J.; PEŘINA, V.

Originální název

Chemistry of plasma-polymerized vinyltriethoxysilane controlled by deposition conditions

Anglický název

Chemistry of plasma-polymerized vinyltriethoxysilane controlled by deposition conditions

Druh

Článek recenzovaný mimo WoS a Scopus

Originální abstrakt

Plasma-polymerized thin films of vinyltriethoxysilane were deposited on IR-transparent silicon wafers using plasma-enhanced chemical vapor deposition at a wide range of RF pulsed power (0.05 - 25 W). The deposited films were analyzed by spectroscopic techniques (RBS, ERDA, XPS, and FTIR) in order to compare their chemical structure and elemental composition, which were correlated with plasma products monitored by mass spectroscopy. Thin polymer films deposited at 0.05 W were SiO-rich (55 at.-%), while those prepared at 25 W were dominated by carbon 66 at.-%. The organic/inorganic character (C/Si ratio) of plasma polymer varied widely, from 2.5 to 7.3 with enhanced power. The chemical structure of the polymer network and side groups was also controlled by the effective power. Chemical analyses enabled us to gain an idea of the chemical structure of the films.

Anglický abstrakt

Plasma-polymerized thin films of vinyltriethoxysilane were deposited on IR-transparent silicon wafers using plasma-enhanced chemical vapor deposition at a wide range of RF pulsed power (0.05 - 25 W). The deposited films were analyzed by spectroscopic techniques (RBS, ERDA, XPS, and FTIR) in order to compare their chemical structure and elemental composition, which were correlated with plasma products monitored by mass spectroscopy. Thin polymer films deposited at 0.05 W were SiO-rich (55 at.-%), while those prepared at 25 W were dominated by carbon 66 at.-%. The organic/inorganic character (C/Si ratio) of plasma polymer varied widely, from 2.5 to 7.3 with enhanced power. The chemical structure of the polymer network and side groups was also controlled by the effective power. Chemical analyses enabled us to gain an idea of the chemical structure of the films.

Klíčová slova

ESCA/XPS; FT-IR; plasma-enhanced chemical vapor deposition (PE-CVD); Rutherford back-scattering (RBS); thin films

Klíčová slova v angličtině

ESCA/XPS; FT-IR; plasma-enhanced chemical vapor deposition (PE-CVD); Rutherford back-scattering (RBS); thin films

Autoři

ČECH, V.; ZEMEK, J.; PEŘINA, V.

Rok RIV

2010

Vydáno

22.12.2008

ISSN

1612-8850

Periodikum

Plasma Processes and Polymers

Svazek

5

Číslo

8

Stát

Spolková republika Německo

Strany od

745

Strany do

752

Strany počet

8

BibTex

@article{BUT48293,
  author="Vladimír {Čech} and Josef {Zemek} and Vratislav {Peřina}",
  title="Chemistry of plasma-polymerized vinyltriethoxysilane controlled by deposition conditions",
  journal="Plasma Processes and Polymers",
  year="2008",
  volume="5",
  number="8",
  pages="745--752",
  issn="1612-8850"
}