Detail publikačního výsledku
Charge carrier transport in semiconductors: a fractal approach
ZMEŠKAL, O.; NEŠPŮREK, S.; WEITER, M.
Originální název
Charge carrier transport in semiconductors: a fractal approach
Anglický název
Charge carrier transport in semiconductors: a fractal approach
Druh
Abstrakt
Originální abstrakt
The knowledge of parameters influencing the charge carrier transport is a crucial requirement for the characterization of electrical properties of materials. In this paper the theory of charge transport and injection current for trap-free low conductivity material and insulator containing charge carrier traps is presented in fractals formalism
Anglický abstrakt
The knowledge of parameters influencing the charge carrier transport is a crucial requirement for the characterization of electrical properties of materials. In this paper the theory of charge transport and injection current for trap-free low conductivity material and insulator containing charge carrier traps is presented in fractals formalism
Klíčová slova
Charge carrier transport, Space charge limited currents, Charge injection, Field effect, Fractal theory, Dielectric spectroscopy
Klíčová slova v angličtině
Charge carrier transport, Space charge limited currents, Charge injection, Field effect, Fractal theory, Dielectric spectroscopy
Autoři
ZMEŠKAL, O.; NEŠPŮREK, S.; WEITER, M.
Rok RIV
2012
Vydáno
20.02.2012
Nakladatel
VIT University
Místo
Vellore, Indie
Kniha
International Conference on Recend Trends in Advanced Materials ICRAM-2012
Strany od
16
Strany do
16
Strany počet
1
BibTex
@misc{BUT89925,
author="Oldřich {Zmeškal} and Stanislav {Nešpůrek} and Martin {Weiter}",
title="Charge carrier transport in semiconductors: a fractal approach",
booktitle="International Conference on Recend Trends in Advanced Materials ICRAM-2012",
year="2012",
pages="16--16",
publisher="VIT University",
address="Vellore, Indie",
note="Abstract"
}