Detail publikace

2D Physical Modelling of Semiconductor Equations for Verification of 1D Lumped-Charge Model of Bipolar Power Devices

MIKLÁŠ, J. PROCHÁZKA, P.

Originální název

2D Physical Modelling of Semiconductor Equations for Verification of 1D Lumped-Charge Model of Bipolar Power Devices

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

The paper demonstrates a finite-element method (FEM) simulation model of semiconductor devices operation. Classical semiconductor equations employing drift, diffusion and generation-recombination transport of charge carriers are established and variational forms for FEM assembly are derived in detail, including a basic voltage and current boundary conditions. Mathematically, a system of mutually coupled nonlinear equations need to be solved, which requires extensive use of nonlinear iteration solver. The derived model was coded in Python by strict use of open source tools, mainly grouped around FEniCSx project. Graphic output figures and characteristics for basic semiconductor structures are presented to demonstrate the functionality of model. An ultimate goal of presented effort is derivation and verification of simplified semi-analytical model of Insulated-gate bipolar transistor (IGBT), including precise transient behavior. This kind of model should be calibrated by use of measurement-obtained data, so the qualitative behavior of device physics at reasonable computational cost is of primary interest of presented FEM model as opposed to commercial device development tools aiming at precise quantitative outputs; which need to be experimentally calibrated even so. As an additional step to simplified one-dimensional model usability verification, results of unusual way of experimental estimation of minority-carrier excess charge within power bipolar transistor collector and base during on-state is presented and compared to simulation result.i

Klíčová slova

Power BTJ model; power BJT switching; IGBT transient model; transistor switching measurement; semiconductor device simulation; finite element method; lumped charge model

Autoři

MIKLÁŠ, J.; PROCHÁZKA, P.

Vydáno

25. 4. 2023

Nakladatel

Brno University of Technology, Faculty of Electrical Engineering and Communication

Místo

Brno, Czech Republic

ISBN

978-80-214-6154-3

Kniha

Proceedings II of the 29 th Conference STUDENT EEICT 2023 Selected papers

Edice

1

ISSN

2788-1334

Periodikum

Proceedings II of the Conference STUDENT EEICT

Stát

Česká republika

Strany od

181

Strany do

187

Strany počet

7

URL

https://www.eeict.cz/eeict_download/archiv/sborniky/EEICT_2023_sbornik_2_v2.pdf

BibTex

@inproceedings{BUT184509,
  author="Ján {Mikláš} and Petr {Procházka}",
  title="2D Physical Modelling of Semiconductor Equations for Verification of 1D Lumped-Charge Model of Bipolar Power Devices",
  booktitle="Proceedings II of the 29 th Conference STUDENT EEICT 2023 Selected papers",
  year="2023",
  series="1",
  journal="Proceedings II of the Conference STUDENT EEICT",
  pages="181--187",
  publisher="Brno University of Technology, Faculty of Electrical Engineering and Communication",
  address="Brno, Czech Republic",
  doi="10.13164/eeict.2023.181",
  isbn="978-80-214-6154-3",
  issn="2788-1334",
  url="https://www.eeict.cz/eeict_download/archiv/sborniky/EEICT_2023_sbornik_2_v2.pdf"
}