Detail publikace
Synthesis of thin-film materials using nonthermal plasma at a higher degree of dissociation
ČECH, V. BRÁNECKÝ, M.
Originální název
Synthesis of thin-film materials using nonthermal plasma at a higher degree of dissociation
Typ
článek v časopise ve Web of Science, Jimp
Jazyk
angličtina
Originální abstrakt
Lower flow rates of precursor molecules are favorable for the synthesis of thin-film materials using nonthermal plasma at a higher degree of dissociation and sufficiently high deposition rate. These deposition conditions can be used for both continuous wave (CW) and pulsed plasmas and result in higher consumption of precursor molecules, which is beneficial for industrial applications due to cost reduction. A wider range of power can be used to control the chemical and physical properties of thin-film materials based on power-dependent plasma chemistry. Hydrogenated amorphous silicon carbide films deposited in CW and pulsed plasma are used as an example. The different kinetics of film growth and the role of self-bias voltage in both types of plasma are discussed.
Klíčová slova
degree of dissociation; nonthermal plasma; organosilicon precursors; plasma-enhanced chemical vapor deposition (PE-CVD); sticking coefficient; thin films
Autoři
ČECH, V.; BRÁNECKÝ, M.
Vydáno
23. 3. 2023
Nakladatel
Wiley
ISSN
1612-8869
Periodikum
Plasma Processes and Polymers
Ročník
20
Číslo
7
Stát
Spolková republika Německo
Strany od
1
Strany do
11
Strany počet
11
URL
Plný text v Digitální knihovně
BibTex
@article{BUT184061,
author="Vladimír {Čech} and Martin {Bránecký}",
title="Synthesis of thin-film materials using nonthermal plasma at a higher degree of dissociation",
journal="Plasma Processes and Polymers",
year="2023",
volume="20",
number="7",
pages="1--11",
doi="10.1002/ppap.202300019",
issn="1612-8869",
url="https://onlinelibrary.wiley.com/doi/full/10.1002/ppap.202300019"
}