Detail publikace

Modeling of the I-V Characteristics in Amorphous Silicon n+-i-n+ Devices

ČECH, V.

Originální název

Modeling of the I-V Characteristics in Amorphous Silicon n+-i-n+ Devices

Typ

článek v časopise - ostatní, Jost

Jazyk

angličtina

Originální abstrakt

Both model and experimental results of electron injection in amorphous silicon n+-i-n+ devices with heavily doped n+ layers are presented using a realistic model of such a structure, developed by the author.

Klíčová slova v angličtině

amorphous silicon, thin film, space-charge-limited currents

Autoři

ČECH, V.

Vydáno

1. 1. 2000

ISSN

0021-4922

Periodikum

Japanese Journal of Applied Physics

Ročník

88

Číslo

9

Stát

Japonsko

Strany od

5374

Strany do

5380

Strany počet

7

BibTex

@article{BUT39847,
  author="Vladimír {Čech}",
  title="Modeling of the I-V Characteristics in Amorphous Silicon n+-i-n+ Devices",
  journal="Japanese Journal of Applied Physics",
  year="2000",
  volume="88",
  number="9",
  pages="7",
  issn="0021-4922"
}